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·High Power Dissipation- : PC= 150W@TC= 25℃ ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SB554 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER.
= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 5V ICBO Collector Cutoff Current VCB= 90V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 2A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz MIN TYP. MAX UNIT 180 V 5 V 3.0 V 2.5 V 0.1 mA 0.1 mA 40 140 5 MHz 300 pF hFE Classifications R O 40-80 70-140 NOTICE： ISC reserves the rights to make change.
2SD424 - SavantIC
·With TO-3 package ·Complement to type 2SB554 ·High power dissipation ·High collector-emitter breakdown voltage : VCEO=1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD425 |
SavantIC |
(2SD425 / 2SD426) SILICON POWER TRANSISTOR |
|
| 2 | 2SD425 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD426 |
Savantic |
(2SD425 / 2SD426) Silicon NPN Power Transistors |
|
| 4 | 2SD426 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD427 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 6 | 2SD428 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 7 | 2SD400 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SD400 |
LGE |
NPN Transistor |
|
| 9 | 2SD400 |
LZG |
SILICON NPN TRANSISTOR |
|
| 10 | 2SD400 |
Yukuto |
NPN Transistor |
|
| 11 | 2SD400 |
Blue Rocket Electronics |
Silicon NPN transistor |
|
| 12 | 2SD401 |
Wing Shing Computer Components |
Silicon Transistor |
|