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2SD2657K Transistors Low frequency amplifier 2SD2657K !Application Low frequency amplifier Driver !External dimensions (Units : mm) (1) 0.4 !Features 1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (3) 1.6 2.8 0.15 0.3Min. 0~0.1 Each lead has same dimensions Abbreviated symbol : FZ.
1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (3) 1.6 2.8 0.15 0.3Min. 0~0.1 Each lead has same dimensions Abbreviated symbol : FZ 0.8 1.1 0.95 0.95 1.9 2.9 (2) (1) Emitter (2) Base (3) Collector !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg ∗Single pulse, PW=1ms !Packaging specifications Unit V V V A A∗ mW °C °C Packa.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2657 |
Rohm |
Transistors |
|
| 2 | 2SD2650 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SD2651 |
Hitachi |
Silicon NPN Epitaxial Transistor |
|
| 4 | 2SD2651 |
Renesas |
Silicon NPN Epitaxial Transistor |
|
| 5 | 2SD2652 |
Rohm |
NPN 1.5A 12V Low Frequency Amplifier Transistors |
|
| 6 | 2SD2653 |
Rohm |
Transistors |
|
| 7 | 2SD2653K |
Rohm |
Transistors |
|
| 8 | 2SD2654 |
Rohm |
Transistor |
|
| 9 | 2SD2654 |
Rohm |
General Purpose Transistor |
|
| 10 | 2SD2655 |
Renesas |
Silicon NPN epitaxial planer type Transistor |
|
| 11 | 2SD2656 |
Rohm |
NPN 1A 30V Low Frequency Amplifier Transistors |
|
| 12 | 2SD2658LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|