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2SD2657 Transistors Low frequency amplifier 2SD2657 zApplication Low frequency amplifier Driver zExternal dimensions (Units : mm) Each lead has 0.4 same dimensions 1.0MAX 0.7 zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 350mV At IC = 1A / IB = 50mA (3) 1.6 0~0.1 0.3~0.6. ROHM : TSMT3 2.8 (2) (1) 0.95 0.95 1.9 2.9 0.16 Abbreviated symb.
1) A collector current is large. 2) VCE(sat) ≦ 350mV At IC = 1A / IB = 50mA (3) 1.6 0~0.1 0.3~0.6. ROHM : TSMT3 2.8 (2) (1) 0.95 0.95 1.9 2.9 0.16 Abbreviated symbol : FZ (1) Emitter (2) Base (3) Collector zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature zPackaging specifications Unit V V V A A ∗1 mW W °C °C Package Code Type 2SD2657 Basic ordering unit (pieces) Taping TL 3000 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2650 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SD2651 |
Hitachi |
Silicon NPN Epitaxial Transistor |
|
| 3 | 2SD2651 |
Renesas |
Silicon NPN Epitaxial Transistor |
|
| 4 | 2SD2652 |
Rohm |
NPN 1.5A 12V Low Frequency Amplifier Transistors |
|
| 5 | 2SD2653 |
Rohm |
Transistors |
|
| 6 | 2SD2653K |
Rohm |
Transistors |
|
| 7 | 2SD2654 |
Rohm |
Transistor |
|
| 8 | 2SD2654 |
Rohm |
General Purpose Transistor |
|
| 9 | 2SD2655 |
Renesas |
Silicon NPN epitaxial planer type Transistor |
|
| 10 | 2SD2656 |
Rohm |
NPN 1A 30V Low Frequency Amplifier Transistors |
|
| 11 | 2SD2657K |
Rohm |
Transistors |
|
| 12 | 2SD2658LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|