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2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) zExternal dimensions (Unit : mm) 2SD2707 0.2 1.2 0.32 1.2 0.8 .
1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) zExternal dimensions (Unit : mm) 2SD2707 0.2 1.2 0.32 1.2 0.8 (2) (3) (1) 0.2 0.4 0.4 0.8 0.5 0.22 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD2654, 2SD2707 2SD2351, 2SD2226K 2SD2227S Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits 60 50 12 0.15 0.2 0.15 0.2 0.3 150 −55 to +150 °C °C W Unit V V V ROHM : EMT3 (1) Base (2) Emitter (3) Collecto.
2SD2654 - Rohm
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2650 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SD2651 |
Hitachi |
Silicon NPN Epitaxial Transistor |
|
| 3 | 2SD2651 |
Renesas |
Silicon NPN Epitaxial Transistor |
|
| 4 | 2SD2652 |
Rohm |
NPN 1.5A 12V Low Frequency Amplifier Transistors |
|
| 5 | 2SD2653 |
Rohm |
Transistors |
|
| 6 | 2SD2653K |
Rohm |
Transistors |
|
| 7 | 2SD2655 |
Renesas |
Silicon NPN epitaxial planer type Transistor |
|
| 8 | 2SD2656 |
Rohm |
NPN 1A 30V Low Frequency Amplifier Transistors |
|
| 9 | 2SD2657 |
Rohm |
Transistors |
|
| 10 | 2SD2657K |
Rohm |
Transistors |
|
| 11 | 2SD2658LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SD2659 |
Panasonic |
Silicon NPN triple diffusion planar type Transistor |
|