of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.
• Small size package: MPAK (SC
–59A)
• Large Maximum current: IC = 1 A
• Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)
• High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
• Complementary pair with 2SB1691
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
Note: Marking is “WM-“.
1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
Item
Symbol
Collector to Base Voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current
VCBO VCEO VEBO
IC .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2650 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
2 | 2SD2651 |
Hitachi |
Silicon NPN Epitaxial Transistor | |
3 | 2SD2651 |
Renesas |
Silicon NPN Epitaxial Transistor | |
4 | 2SD2652 |
Rohm |
NPN 1.5A 12V Low Frequency Amplifier Transistors | |
5 | 2SD2653 |
Rohm |
Transistors | |
6 | 2SD2653K |
Rohm |
Transistors | |
7 | 2SD2654 |
Rohm |
Transistor | |
8 | 2SD2654 |
Rohm |
General Purpose Transistor | |
9 | 2SD2656 |
Rohm |
NPN 1A 30V Low Frequency Amplifier Transistors | |
10 | 2SD2657 |
Rohm |
Transistors | |
11 | 2SD2657K |
Rohm |
Transistors | |
12 | 2SD2658LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |