2SD2656 General purpose amplification (30V, 1A) Parameter VCEO IC Value 30V 1A lFeatures 1)A collector current is large 2)Collector-Emitter saturation voltage is low. VCE(sat)≦350mV at IC=500mA /IB=25mA lOutline UMT3 SOT-323 SC-70 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER, DRIVER lPackaging specificatio.
1)A collector current is large 2)Collector-Emitter saturation voltage is low. VCE(sat)≦350mV at IC=500mA /IB=25mA lOutline UMT3 SOT-323 SC-70 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER, DRIVER lPackaging specifications Part No. Package Package size Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking 2SD2656 UMT3 2021 T106 180 8 3000 EU www.rohm..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2650 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
2 | 2SD2651 |
Hitachi |
Silicon NPN Epitaxial Transistor | |
3 | 2SD2651 |
Renesas |
Silicon NPN Epitaxial Transistor | |
4 | 2SD2652 |
Rohm |
NPN 1.5A 12V Low Frequency Amplifier Transistors | |
5 | 2SD2653 |
Rohm |
Transistors | |
6 | 2SD2653K |
Rohm |
Transistors | |
7 | 2SD2654 |
Rohm |
Transistor | |
8 | 2SD2654 |
Rohm |
General Purpose Transistor | |
9 | 2SD2655 |
Renesas |
Silicon NPN epitaxial planer type Transistor | |
10 | 2SD2657 |
Rohm |
Transistors | |
11 | 2SD2657K |
Rohm |
Transistors | |
12 | 2SD2658LS |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |