2SD2057 - INCHANGE

2SD2057 NPN Transistor

·High Voltage, High Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCBO Col.

Features

Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1500V; IE= 0 30 μA 300 hFE DC Current Gain IC= 5A; VCE= 10V 4.5 15 VECF C-E Diode Forward Voltage IF= 6A 2.3 V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 2 MHz Switching times tstg Storage Time tf Fall Time IC= 5A, IB1= IB1= 1.2A; Lleak= 5μH; 12 μs 0.8 μs Notice： ISC reserves the rights to make changes of the content herein .