Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SD2057 |
Click to view a larger image
| Part Number | 2SD2057 |
| Manufacturer | INCHANGE |
| Description | ·High Voltage, High Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal... |
| Features |
Base Breakdown Voltage
IE= 200mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A
8.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 1000V; IE= 0 VCB= 1500V; IE= 0
30 μA
300
hFE
DC Current Gain
IC= 5A; VCE= 10V
4.5
15
VECF
C-E Diode Forward Voltage
IF= 6A
2.3
V
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
2
MHz
Switching times
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= IB1= 1.2A; Lleak= 5μH;
12 μs 0.8 μs
Notice： ISC reserves the rights to make changes of the content herein ... |
| Document |
 2SD2057 Data Sheet
PDF 192.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2050 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SD2051 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD2051 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD2052 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2052 |
INCHANGE |
NPN Transistor |
|