2SD2058 - Savant

2SD2058 Silicon NPN Power Transistors

·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL .

Features

t Collector-emitter saturation voltage IC=2A ;IB=0.2A VBE Base-emitter on voltage IC=0.5A;VCE=5V ICBO Collector cut-off current VCB=60V;IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=0.5A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=5V COB Collector output capacitance f=1MHz;VCB=10V Switching times ton Turn-on time ts Storage time tf Fall time IC=2.0A; IB1=-IB2=0.2A VCC=30V ,RL=15A hFE Classifications O Y G 60-120 100-200 150-300 Product Specification 2SD2058 MIN TYP. MAX UNIT 60 V 1.5 V 3.0 V 10 µA 1.0 mA 60 3.0 MHz 35 p.