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Power Transistors 2SD2051 Silicon NPN epitaxial planar type Darlington For low-frequency amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q 4.0 High foward current transfer ratio hFE Incorporating a built-in zener diode Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Rat.
q q q
4.0
High foward current transfer ratio hFE Incorporating a built-in zener diode Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 60±10 60±10 5 2.5 1.6 12 2.0 150
–55 to +150 Unit V V V A A W ˚C ˚C
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
14.0±0.5
0.8±0.1
.
2SD2051 - INCHANGE
·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Incorp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2050 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SD2052 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD2052 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2052 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD2053 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD2053 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2055 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2057 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD2057 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD2057 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD2058 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD2058 |
Savant |
Silicon NPN Power Transistors |
|