·With TO-220F package ·Complement to type 2SB1367 ·Low collector saturation voltage: VCE(SAT)=2.0V(Max) at IC=4A,IB=0.4A ·Collector power dissipation: PC=30W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO .
Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=4A ;IB=0.4A IC=1A;VCE=5V VCB=100V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 40 20 MIN 100 www.datasheet4u.com 2SD2059 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP MAX UNIT V 2.0 1.5 0.1 1.0 240 V V mA mA 12 100 MHz pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collec.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2050 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
2 | 2SD2051 |
INCHANGE |
NPN Transistor | |
3 | 2SD2051 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
4 | 2SD2052 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
5 | 2SD2052 |
INCHANGE |
NPN Transistor | |
6 | 2SD2052 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SD2053 |
INCHANGE |
NPN Transistor | |
8 | 2SD2053 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SD2055 |
INCHANGE |
NPN Transistor | |
10 | 2SD2057 |
INCHANGE |
NPN Transistor | |
11 | 2SD2057 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SD2057 |
SavantIC |
SILICON POWER TRANSISTOR |