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Power Transistors 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1347 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output s.
q q q q
Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C)
Ratings 160 160 5 20 12 120 3.5 150
–55 to +155 Unit V V V A
26.0±0.5
10.0
1.5
2.0
4.0
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP I.
2SD2029 - SavantIC
·With TO-3PL package ·Complement to type 2SB1347 ·Wide area of safe operation ·High transition frequency APPLICATIONS ·O.
2SD2029 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1347 ·Mi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2020 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD2021 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD2022 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2023 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD2023 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD2024 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2024 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2025 |
SavantIC |
Silicon NPN Power Transistors |
|
| 9 | 2SD2025 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD2027 |
Inchange Semiconductor |
Power Transistor |
|
| 11 | 2SD2028 |
Sanyo Semicon Device |
NPN Transistor |
|
| 12 | 2SD200 |
INCHANGE |
NPN Transistor |
|