2SD2021 - INCHANGE

2SD2021 NPN Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect.

Features

TIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.05A 3.0 V VBE(on) Base-Emitter On Voltage IC= 50mA ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCE= 150V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 50mA; VCE= 5V 100 320 hFE-2 DC Current Gain IC= 1A; VCE= 5V 60 COB Output Capacitance IE= 0; VCB= 100V; ftest= 1.0MHz 20 pF NOTICE： ISC reserves the right.