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Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features · With Zener diode (11±3V) between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting the 2SD2028applied sets to be made small and slim. Package Dimension.
· With Zener diode (11±3V) between collector and base.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Ultrasmall-sized package permitting the 2SD2028applied sets to be made small and slim.
Package Dimensions
unit:mm 2018B
[2SD2028]
0.5
0.4 3 0.16
0 to 0.1
0.5
1
0.95 0.95 2 1.9 2.9
1.5
2.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2020 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD2021 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD2022 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2023 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD2023 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD2024 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2024 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2025 |
SavantIC |
Silicon NPN Power Transistors |
|
| 9 | 2SD2025 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD2027 |
Inchange Semiconductor |
Power Transistor |
|
| 11 | 2SD2029 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD2029 |
SavantIC |
SILICON POWER TRANSISTOR |
|