2SD2024 - INCHANGE

2SD2024 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120.

Features

Breakdown Voltage IC= 5mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA; IE= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE DC Current Gain IC= 2A; VCE= 3V 1000 20000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 50 pF fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= 5V; ftest= 10MHz 40 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificat.