2SD2022 - INCHANGE

2SD2022 NPN Transistor

·High DC Current Gain- : hFE = 3000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency amplifications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.

Features

SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1mA ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain VEB= 5V; IC= 0 IC= 1A; VCE= 2V MIN TYP. MAX UNIT 50 70 V 50 70 V 5 V 1.5 V 2.0 V 10 μA 3000 3.0 mA NOTICE： ISC reserves the rights to make changes o.