·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SB1317 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.
IT VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 2.5 V VBE(on) Base-Emitter On Voltage IC= 8A ; VCE= 5V 1.8 V ICBO Collector Cutoff Current VCB= 180V ; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA hFE-1 DC Current Gain IC= 20mA ; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 60 200 hFE-3 DC Current Gain IC= 8A ; VCE= 5V 20 COB Output Capacitance IE= 0;VCB= 10V; ftest= 1.0MHz 200 pF fT Current-Gain—Bandwidth Product IC= 0.5A;VCE= 5V;ftest= 1.0MHz 20 MHz hFE-2 Classifications Q S P 60-120 80-160 100-200 NOTICE: ISC .
Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary.
·With TO-3PL package ·Complement to type 2SB1317/1317A ·Wide area of safe operation ·High transition frequency fT APPLIC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1970 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1974 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
3 | 2SD1975A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
4 | 2SD1975A |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1976 |
INCHANGE |
NPN Transistor | |
6 | 2SD1976 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
7 | 2SD1978 |
Renesas |
NPN Transistor | |
8 | 2SD1978 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
9 | 2SD1979 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
10 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors | |
11 | 2SD1903 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
12 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |