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2SD1975 |
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| Part Number | 2SD1975 |
| Manufacturer | INCHANGE |
| Description | ·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SB1317 ·Minimum Lot-to-Lot variations for robust device performance and reliable operat... |
| Features |
IT
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
2.5
V
VBE(on) Base-Emitter On Voltage
IC= 8A ; VCE= 5V
1.8
V
ICBO
Collector Cutoff Current
VCB= 180V ; IE= 0
50 μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
50 μA
hFE-1
DC Current Gain
IC= 20mA ; VCE= 5V
20
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
60
200
hFE-3
DC Current Gain
IC= 8A ; VCE= 5V
20
COB
Output Capacitance
IE= 0;VCB= 10V; ftest= 1.0MHz
200
pF
fT
Current-Gain—Bandwidth Product IC= 0.5A;VCE= 5V;ftest= 1.0MHz
20
MHz
hFE-2 Classifications Q S P 60-120 80-160 100-200 NOTICE： ISC ... |
| Document |
 2SD1975 Data Sheet
PDF 212.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1970 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1974 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD1975 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1975 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1975A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|