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Ordering number:EN2263A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1267/2SD1903 30V/8A High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters and other general high-current switching. Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage : VCE(sat.
· Suitable for sets whose height is restricted.
· Low collector to emitter saturation voltage :
VCE(sat)=
–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
Package Dimensions
unit:mm 2049B
[2SB1267/2SD1903]
( ) : 2SB1267
Specifications
E : Emitter C : Collector B : Base SANYO :TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Ratin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|
| 2 | 2SD1904 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SD1905 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 4 | 2SD1906 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 5 | 2SD1907 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 6 | 2SD1908 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 7 | 2SD1910 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD1910 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1911 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD1911 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD1912 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 12 | 2SD1912 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|