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2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 1 2, 4 4 ID 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1974 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward cu.
, IC = 0 VCE = 2 V, IC = 0.1 A
*1 I C = 0.8 A, IB = 80 mA
*1 I D = 0.6 A
*1
Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Notes: 1. Pulse test 2. Marking is “ES”. I EBO hFE VCE(sat) VD
2
2SD1974
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (A) Area of Safe Operation 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1970 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1975 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD1975 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1975 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD1975A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD1975A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD1976 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD1976 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD1978 |
Renesas |
NPN Transistor |
|
| 10 | 2SD1978 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD1979 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD1902 |
Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors |
|