2SD1979 - Panasonic Semiconductor

2SD1979 Silicon NPN Transistor

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 2.1±0.1 0.425 1.25±0.1 0.425 Unit: mm 0.65 q q q Low ON resistance Ron. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazin.

Features

Unit µA µA V 20 500 2500 0.1 0.6 80 4.5 1.0 V V MHz pF Ω FE Rank classification Rank hFE S 500 ~ 1500 3WS T 800 ~ 2500 3WT Measurement circuit 1kΩ IB=1mA f=1kHz V=0.3V Marking Symbol VB VV VA Ron= VB !1000(Ω) VA
  –VB 1 Transistor PC — Ta 240 24 Ta=25˚C 200 20 100 2SD1979 IC — VCE 120 VCE=2V 25˚C Ta=75˚C
  –25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 16 9µA 8µA 7µA 6µA 5µA 4µA 3µA 2µA 1µA Base current IB (mA) 12 IB=10µA 80 120 12 60 80 8 40 40 4 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Amb.