·With TO-3PN package ·Built-in damper diode ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tst.
ration voltage Base-emitter saturation voltage CONDITIONS IE=500mA; IC=0 IC=3A; IB=0.8A IC=3A; IB=0.8A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE fT VF DC current gain Transition frequency Diode forward voltage IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=-3.5A,IB=0 5 2 MIN 7 www.datasheet4u.com 2SD1729 SYMBOL V(BR)EBO VCEsat VBEsat TYP. MAX UNIT V 8.0 1.5 10 1 25 V V µA mA MHz 2.0 V Switching times ts tf Storage time IC=3A; IB1=0.8A IB2=-1.6A VCC=200V Fall time 0.2 µs 1.5 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLI.
·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1720 |
Inchange Semiconductor |
Power Transistor | |
2 | 2SD1722 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SD1723 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SD1724 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SD1725 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | 2SD1726 |
ETC |
TRIPLE DIFFUSED PLANER TYPE TRANSISTOR | |
7 | 2SD1727 |
Inchange Semiconductor |
Power Transistor | |
8 | 2SD1728 |
Inchange Semiconductor |
Power Transistor | |
9 | 2SD1700 |
NEC |
NPN SILICON TRANSISTOR | |
10 | 2SD1701 |
NEC |
NPN SILICON TRANSISTOR | |
11 | 2SD1702 |
NEC |
NPN Transistor | |
12 | 2SD1705 |
Panasonic Semiconductor |
Silicon NPN Transistor |