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2SD1729 |
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| Part Number | 2SD1729 |
| Manufacturer | INCHANGE |
| Description | ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for h... |
| Features |
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.8A
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0 VCB= 1500V; IE= 0
VECF
C-E Diode Forward Voltage
IF= 3.5A
fT
Transition Frequency
IC= 0.5A; VCE= 10V
Switching Times, Resistive Load
ts
Storage Time
tf
Fall Time
IC= 3A; IB1= 0.8A; IB2= 1.6A, VCC= 200V
2SD1729
MIN TYP MAX UNIT
7
V
8.0
V
1.5
V
5
25
10 μA
1.0 mA
2.0
V
2
MHz
1.5
μs
0.2
μs
NOTICE： ISC reserves the rights to make changes ... |
| Document |
 2SD1729 Data Sheet
PDF 211.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1720 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD1722 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SD1723 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SD1724 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SD1725 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|