·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collec.
E= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.4A hFE DC Current Gain IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 VECF C-E Diode Forward Voltage IF= 1.5A fT Transition Frequency IC= 0.5A; VCE= 10V Switching Times, Resistive Load ts Storage Time tf Fall Time IC= 1A; IB1= 0.3A; IB2= 0.6A, VCC= 200V 2SD1727 MIN TYP MAX UNIT 7 V 8.0 V 1.5 V 5 25 10 μA 1.0 mA 1.5 V 2 MHz 1.0 μs 0.2 μs NOTICE: ISC reserves the rights to make changes o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1720 |
Inchange Semiconductor |
Power Transistor | |
2 | 2SD1722 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SD1723 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SD1724 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | 2SD1725 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | 2SD1726 |
ETC |
TRIPLE DIFFUSED PLANER TYPE TRANSISTOR | |
7 | 2SD1728 |
Inchange Semiconductor |
Power Transistor | |
8 | 2SD1729 |
INCHANGE |
NPN Transistor | |
9 | 2SD1729 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SD1700 |
NEC |
NPN SILICON TRANSISTOR | |
11 | 2SD1701 |
NEC |
NPN SILICON TRANSISTOR | |
12 | 2SD1702 |
NEC |
NPN Transistor |