2SD1720 - Inchange Semiconductor

2SD1720 Power Transistor

·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1291 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.

Features

R)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 5V  hFE Classifications E F 100-200 160-320 2SD1720 MIN TYP. MAX UNIT 60 V 60 V 5 V 1.0 V 1.5 V 10 μA 10 .