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Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1154 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be instal.
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• Full-pack package which can be installed to the heat sink with one screw
φ 3.2±0.1
15.0±0.2 (3.5) Solder Dip
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEB.
2SD1705 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1700 |
NEC |
NPN SILICON TRANSISTOR |
|
| 2 | 2SD1701 |
NEC |
NPN SILICON TRANSISTOR |
|
| 3 | 2SD1702 |
NEC |
NPN Transistor |
|
| 4 | 2SD1706 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SD1707 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD1707 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1709 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2SD1710 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1710 |
MCC |
NPN Silicon Power Transistors |
|
| 10 | 2SD1710 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD1710 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SD1710A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|