Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package wh.
q q q q
Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 100 100 5 8 5 40 2 150
–55 to +155 Unit V V V A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage.
TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package. / Features ,,, 2SB1063 。 Excellent hFE, wide A.
·With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation APPLICATIONS .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1063 ·M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1490 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1491 |
NEC |
Silicon Power Transistor | |
3 | 2SD1492 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD1492 |
INCHANGE |
NPN Transistor | |
5 | 2SD1493 |
Inchange Semiconductor |
Power Transistor | |
6 | 2SD1494 |
Inchange Semiconductor |
Power Transistor | |
7 | 2SD1495 |
Inchange Semiconductor |
Power Transistor | |
8 | 2SD1496 |
INCHANGE |
NPN Transistor | |
9 | 2SD1496 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SD1497 |
INCHANGE |
NPN Transistor | |
11 | 2SD1497 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SD1499-P |
MCC |
NPN Silicon Power Transistors |