2SD1490 - Hitachi Semiconductor

2SD1490 Silicon NPN Transistor

2SD1490 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1059 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1490 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperat.

Features

Gain bandwidth product Collector output capacitance Note: B 100 to 200 C 160 to 320 D 250 to 500 V(BR)EBO I CBO I EBO hFE
* 100 — — — VCE(sat) fT Cob V MHz pF I C = 1 A, IB = 0.1 A VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD1490 is grouped by h FE as follows. See characteristic curves of 2SD789. 2 2SD1490 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) 0.8 0.4 0 50 100 Ambient Temperature Ta (°C) 150 3 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (r.