·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltag.
IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 600V; IE= 0 5.0 V 1.5 V 10 μA tf Fall Time IC= 2.75A, IB1= 0.6A, IB2= 1.3A 1.0 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1490 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1491 |
NEC |
Silicon Power Transistor | |
3 | 2SD1492 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD1492 |
INCHANGE |
NPN Transistor | |
5 | 2SD1493 |
Inchange Semiconductor |
Power Transistor | |
6 | 2SD1495 |
Inchange Semiconductor |
Power Transistor | |
7 | 2SD1496 |
INCHANGE |
NPN Transistor | |
8 | 2SD1496 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SD1497 |
INCHANGE |
NPN Transistor | |
10 | 2SD1497 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SD1499 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SD1499 |
INCHANGE |
NPN Transistor |