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·With TO-3PN package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM I.
ctor-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Fall time CONDITIONS IE=10mA; IC=0 IC=10mA; RBE=; IC=5A; IB=1A IC=5A; IB=1A VCE=1500V; VBE=1.5V VEB=7V; IC=0 IC=0.3A ; VCE=5V IC=5A ; VCE=5V ICP=4A;IB1=1.3A; LB=0 10 5 MIN 7 600 www.datasheet4u.com 2SD1497 SYMBOL V(BR)EBO V(BR)CEO VCEsat VBEsat ICEX IEBO hFE-1 hFE-2 tf TYP. MAX UNIT V V 5.0 1.5 1.0 1.0 30 V V mA mA 2.0 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACK.
2SD1497 - INCHANGE
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device perf.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1490 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1491 |
NEC |
Silicon Power Transistor |
|
| 3 | 2SD1492 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1492 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD1493 |
Inchange Semiconductor |
Power Transistor |
|
| 6 | 2SD1494 |
Inchange Semiconductor |
Power Transistor |
|
| 7 | 2SD1495 |
Inchange Semiconductor |
Power Transistor |
|
| 8 | 2SD1496 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1496 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD1499 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD1499 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1499 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|