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·With TO-3PN package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj.
Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IE=10mA; IC=0 IC=10mA; RBE=: IC=1.2A; IB=0.3A IC=1.2A; IB=0.3A VCE=1500V; VBE=1.5V VEB=6V; IC=0 IC=0.3A ; VCE=5V 10 MIN 6 600 www.datasheet4u.com 2SD1492 SYMBOL V(BR)EBO V(BR)CEO VCEsat VBEsat ICEX IEBO hFE TYP. MAX UNIT V V 5.0 1.5 1.0 1.0 30 V V mA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1492 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 .
2SD1492 - INCHANGE
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide area of safe operation ·Minimum Lot-to-Lot vari.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1490 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1491 |
NEC |
Silicon Power Transistor |
|
| 3 | 2SD1493 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD1494 |
Inchange Semiconductor |
Power Transistor |
|
| 5 | 2SD1495 |
Inchange Semiconductor |
Power Transistor |
|
| 6 | 2SD1496 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1496 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD1497 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1497 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD1499 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD1499 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1499 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|