2SD1421 - Hitachi Semiconductor

2SD1421 Silicon NPN Transistor

2SD1421 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1421 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction .

Features

down voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1
* hFE2 Collector to emitter saturation voltage Base to emitter voltage Note: Mark hFE1 ED 60 to 120 VCE(sat) VBE EE 100 to 200 60 30 — — V V I C = 0.5 A, IB = 50 mA, Pulse VCE = 5 V, IC = 0.15 A, Pulse 1. The 2SD1421 is grouped by h FE1 as follows. 2 2SD1421 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation Pc (W) (on the alumina ceramic board) Collector Current IC (A) Typical Output Characteristics 1.0 0 5. 0 4. 3.5 0 3. 2.5 Pulse 0.8 0.8 0.6 2.0 1.5 0.4 1.0 0.4 0.2 0.5 mA IB = .