Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO .
akdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V VECF C-E Diode Forward Voltage IF= 2.5A fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance tf Fall Time IE= 0 ; VCB= 10V;ftest=1.0MHz IC= 2A , IB= 0.6A, MIN TYP. MAX UNIT 5 V 5.0 8.0 V 1.5 V 10 uA 67 200 mA 8 2.0 V 3 MHz 95 pF 1.0 μs NOTICE： ISC r.
2SD1425 - SavantIC
·With TO-3PH package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·De.
2SD1425 - Toshiba
: SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VCBO=1500V ..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1420 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1421 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD1423 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1423A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD1424 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD1426 |
Toshiba |
NPN Transistor |
|
| 7 | 2SD1426 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD1426 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1427 |
Toshiba |
NPN Transistor |
|
| 10 | 2SD1427 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD1427 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1428 |
Toshiba |
Silicon NPN Transistor |
|