2SD1424 - Panasonic Semiconductor

2SD1424 Silicon NPN Transistor

Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.0±0.2 s Features q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Sym.

Features

q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 50 40 15 100 50 300 150
  –55 ~ +150 Unit V 1 2 3 1.27 1.27 V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.15 EIAJ:SC
  –72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Fo.