Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1423 2SD1423A 2SD1423 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) 0.7±0.1 2.0±0.2 marking 1 2 3 .
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1423 2SD1423A 2SD1423 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
(Ta=25˚C)
0.7±0.1 2.0±0.2
marking 1 2 3
30 60 25 50 7 1 0.5 300 150
–55 ~ +150
V
emitter voltage 2SD1423A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 2.54±0.15
EIAJ:SC
–72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitte.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1420 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1421 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
3 | 2SD1423A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
4 | 2SD1424 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
5 | 2SD1425 |
Toshiba |
Silicon NPN Transistor | |
6 | 2SD1425 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SD1425 |
INCHANGE |
NPN Transistor | |
8 | 2SD1426 |
Toshiba |
NPN Transistor | |
9 | 2SD1426 |
INCHANGE |
NPN Transistor | |
10 | 2SD1426 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SD1427 |
Toshiba |
NPN Transistor | |
12 | 2SD1427 |
SavantIC |
SILICON POWER TRANSISTOR |