2SD1421 |
Part Number | 2SD1421 |
Manufacturer | Hitachi Semiconductor |
Description | 2SD1421 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1421 Absolute Maximum Ratings (Ta = 25°C) It... |
Features |
down voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Note: Mark hFE1 ED 60 to 120 VCE(sat) VBE EE 100 to 200
60 30 — —
V V
I C = 0.5 A, IB = 50 mA, Pulse VCE = 5 V, IC = 0.15 A, Pulse
1. The 2SD1421 is grouped by h FE1 as follows.
2
2SD1421
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation Pc (W) (on the alumina ceramic board) Collector Current IC (A) Typical Output Characteristics 1.0
0 5. 0 4. 3.5 0 3. 2.5
Pulse
0.8
0.8
0.6
2.0
1.5
0.4
1.0
0.4
0.2
0.5 mA IB = ... |
Document |
2SD1421 Data Sheet
PDF 30.19KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1420 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1423 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SD1423A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
4 | 2SD1424 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
5 | 2SD1425 |
Toshiba |
Silicon NPN Transistor |