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·High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) ·High DC current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector.
HARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA VECF C-E Diode Forward Voltage IF= 4A ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE -1 DC Current Gain IC= 2A ; VCE= 2V hFE -2 DC Current Gain IC= 4A ; VCE= 2V MIN TYP. MAX UNIT 400 V 2.0 V 2.5 V 3.0 V 0.5 mA 3.0 mA 600 100 NOTICE： ISC reserves the right.
2SD1409A - Toshiba Semiconductor
2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A High Voltage Switching Applications .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1409 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | 2SD1409 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1409 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1400 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD1401 |
Sanyo Semicon Device |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR |
|
| 6 | 2SD1402 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1402 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD1403 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1403 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 10 | 2SD1403 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD1404 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 12 | 2SD1405 |
Toshiba |
Silicon NPN Transistor |
|