SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltag.
+0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) Rating 25 20 5 0.7 1 150 150 -55 to +150 Unit V V V A A mW PC Tj Tstg Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage.
2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 (Previous ADE-208-1142) Rev.2.00 Aug.10.2005 Application • Low frequency .
2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD110 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor | |
2 | 2SD1105 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor | |
3 | 2SD111 |
INCHANGE |
Silicon NPN Power Transistor | |
4 | 2SD1110 |
INCHANGE |
NPN Transistor | |
5 | 2SD1110 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SD1111 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
7 | 2SD1113 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | 2SD1113 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
9 | 2SD1113 |
Renesas |
Silicon NPN Transistor | |
10 | 2SD1113K |
Hitachi Semiconductor |
NPN TRANSISTOR | |
11 | 2SD1113K |
Renesas |
Silicon NPN Transistor | |
12 | 2SD1114 |
INCHANGE |
NPN Transistor |