2SD1101 |
Part Number | 2SD1101 |
Manufacturer | Guangdong Kexin Industrial |
Description | SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 ... |
Features |
+0.1 2.4-0.1
Low Frequency amplifier.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC
iC(peak)
Rating 25 20 5 0.7 1 150 150 -55 to +150
Unit V V V A A mW
PC Tj Tstg
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage... |
Document |
2SD1101 Data Sheet
PDF 53.23KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD110 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor | |
2 | 2SD1101 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
3 | 2SD1101 |
Renesas |
Silicon NPN Transistor | |
4 | 2SD1105 |
Inchange Semiconductor Company |
Silicon NPN Power Transistor | |
5 | 2SD111 |
INCHANGE |
Silicon NPN Power Transistor |