2SD111 - INCHANGE

2SD111 Silicon NPN Power Transistor

·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V.

Features

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC=0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V COB Output Capacitance IE= 0; VCB= 50V; f= 1MHz  hFE-2 Classifications R O Y 30-90 50-150 100-300 2SD111 MIN TYP. MAX UNIT 80 V 10 V 1.5 V 2.5 V 0.5 mA 10 mA 30 300 1.