2SD1114 - INCHANGE

2SD1114 NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid/ relay drivers ·Motor control ·Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

Features

ER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 V(BR)CBO Collector - Base Breakdown Voltage IC= 0.1mA; IE= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA VBE(sat) Base-Emitter Saturation Voltage ICEO Collector Cutoff Current IC= 6A; IB= 60mA VCB= 400V; Rbe = ∞ hFE DC Current Gain IC= 4A; VCE= 2V Switching Times ton Turn-On Time Toff Turn-On Time IC= 6A; IB1= IB2= 60mA; MIN TYP. MAX UNIT 6 V 400 V 400 V 1.5 V 2.0 V 0.1 mA 500 2.0 μs 23 μs NOTICE： ISC reserv.