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·With TO-3PFa package ·Complement to type 2SB849 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector .
ce Transition frequency CONDITIONS IC=10mA ;IB=0 IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCB=120V; IE=0 VEB=6V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.2A ; VCE=5V 20 40 MIN 120 www.datasheet4u.com 2SD1110 SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE -2 COB fT TYP. MAX UNIT V 2.0 2.0 50 50 V V µA µA 200 190 15 pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1110 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 .
2SD1110 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB849 ·Minimum L.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD111 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 2 | 2SD1111 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SD1113 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SD1113 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SD1113 |
Renesas |
Silicon NPN Transistor |
|
| 6 | 2SD1113K |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SD1113K |
Renesas |
Silicon NPN Transistor |
|
| 8 | 2SD1114 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1115 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1115 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD1115K |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD1115K |
SavantIC |
SILICON POWER TRANSISTOR |
|