2SC5975 - Renesas Technology

2SC5975 Silicon NPN Epitaxial Type Transistor

2SC5975 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0381-0100Z Rev.1.00 Jul.06.2004 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz www.DataSheet4U.com Outline MFPAK-4 3 2 2 WU4 1 3 1 4 1. Emitter 2. Collector 3. Emitter .

Features

• High gain bandwidth product fT = 20 GHz typ.
• High power gain and low noise figure; PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz www.DataSheet4U.com Outline MFPAK-4 3 2 2 WU4 1 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “WU-”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation Pc
*1 Junction temperature Tj Storage temperature Tstg Note: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side ) Ratings 12 4 1.5 35 200 .