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medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5765L-T9S-K 2SC5765G-T9S-K TO-92SP Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 1 2 3 E C B Packing.
* Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SC5765L-T9S-K
2SC5765G-T9S-K
TO-92SP
Note: Pin Assignment: E: Emitter C: Collector B: Base
Pin Assignment
1
2
3
E
C
B
Packing Bulk
MARKING
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1 of 4
QW-R216-002.D
2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO
15
V
VCEO
10
V
Emitter-Base .
2SC5765 - Toshiba Semiconductor
2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5761 |
NEC |
NPN SiGe RF TRANSISTOR |
|
| 2 | 2SC5763 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5763 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC5764 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 5 | 2SC5764 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC570 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 7 | 2SC5700 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC5700 |
Renesas |
Silicon NPN Transistor |
|
| 9 | 2SC5702 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 10 | 2SC5702 |
Hitachi |
Silicon NPN Transistor |
|
| 11 | 2SC5703 |
Toshiba Semiconductor |
NPN Transistor |
|
| 12 | 2SC5704 |
CEL |
NPN SILICON RF TRANSISTOR |
|