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2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005 RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 Note: Marking is “WB–“. 1 2 .
• High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
Outline
REJ03G0751-0100 (Previous ADE-208-1435)
Rev.1.00 Aug.10.2005
RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R )
3
Note: Marking is “WB
–“.
1 2
1. Emitter 2. Base 3. Collector
*MFPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEB.
2SC5700 - Hitachi Semiconductor
2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features • High power gain l.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC570 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5702 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 3 | 2SC5702 |
Hitachi |
Silicon NPN Transistor |
|
| 4 | 2SC5703 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SC5704 |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 6 | 2SC5704-A |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 7 | 2SC5704-T3-A |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 8 | 2SC5706 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 9 | 2SC5706 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | 2SC5706 |
Weitron Technology |
NPN Transistor |
|
| 11 | 2SC5706 |
ON Semiconductor |
Bipolar Transistor |
|
| 12 | 2SC5706 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|