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Ordering number : ENN6971A 2SC5764 NPN Triple Diffused Planar Silicon Transistor 2SC5764 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2041A [2SC5764] 10.0 3.2 3.5 7.2 4.5 2.8 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.
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Package Dimensions
unit : mm 2041A
[2SC5764]
10.0 3.2 3.5 7.2 4.5 2.8
High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process.
18.1
16.0
5.6
14.0
1.6 1.2 0.75 1 2 3 2.55 2.4
2.4 0.7
2.55
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW≤300µs, Duty cycle≤10% Tc=25°C
1 : Base 2 : Collector 3 : Em.
2SC5764 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·100% ava.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5761 |
NEC |
NPN SiGe RF TRANSISTOR |
|
| 2 | 2SC5763 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5763 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC5765 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC5765 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 6 | 2SC570 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 7 | 2SC5700 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC5700 |
Renesas |
Silicon NPN Transistor |
|
| 9 | 2SC5702 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 10 | 2SC5702 |
Hitachi |
Silicon NPN Transistor |
|
| 11 | 2SC5703 |
Toshiba Semiconductor |
NPN Transistor |
|
| 12 | 2SC5704 |
CEL |
NPN SILICON RF TRANSISTOR |
|