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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, FEATURES . Complementary to 2SA490. • Recommended for 10W High-Fidelity Audio Frequency Amplifier Output Stage. 10.3 MAX. Unit in mm 03.6±v.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter.
. Complementary to 2SA490.
• Recommended for 10W High-Fidelity Audio
Frequency Amplifier Output Stage.
10.3 MAX.
Unit in mm
03.6±v.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO v CEO VEBO
T-C
XE
PC
T
J
T stg
RATING 50 40
5 3
-3
25
150 -55 ^ 150
UNIT V V V A A W
°C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
2.54
2-54
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1. BASE 2. COLLECTORIHEAT SINK; 3. EMITTER
J ED EC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5700 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5700 |
Renesas |
Silicon NPN Transistor |
|
| 3 | 2SC5702 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 4 | 2SC5702 |
Hitachi |
Silicon NPN Transistor |
|
| 5 | 2SC5703 |
Toshiba Semiconductor |
NPN Transistor |
|
| 6 | 2SC5704 |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 7 | 2SC5704-A |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 8 | 2SC5704-T3-A |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 9 | 2SC5706 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5706 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | 2SC5706 |
Weitron Technology |
NPN Transistor |
|
| 12 | 2SC5706 |
ON Semiconductor |
Bipolar Transistor |
|