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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5703 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) .
ature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2000-05 1 2016-09-27 Electrical Characteristics.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC570 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5700 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 3 | 2SC5700 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SC5702 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 5 | 2SC5702 |
Hitachi |
Silicon NPN Transistor |
|
| 6 | 2SC5704 |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 7 | 2SC5704-A |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 8 | 2SC5704-T3-A |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 9 | 2SC5706 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5706 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | 2SC5706 |
Weitron Technology |
NPN Transistor |
|
| 12 | 2SC5706 |
ON Semiconductor |
Bipolar Transistor |
|