SMD Type Transistors Silicon NPN triple diffusion planar type 2SC5457 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 +0.15 0.50 -0.15 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE +0.1 0.80-0.1 0.12.
+0.2 9.70 -0.2 +0.15 0.50 -0.15 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25 Ta = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VCEO V.
Power Transistors 2SC5457 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 6.5±.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5450 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | 2SC5450 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
3 | 2SC5451 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
4 | 2SC5452 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
5 | 2SC5453 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
6 | 2SC5454 |
NEC |
NPN TRANSISTOR | |
7 | 2SC5455 |
NEC |
NPN TRANSISTOR | |
8 | 2SC5458 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
9 | 2SC5459 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5404 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
11 | 2SC5404 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC5404 |
INCHANGE |
NPN Transistor |