2SC5454 - NEC

2SC5454 NPN TRANSISTOR

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage PACKAGE DIMENSIONS (in mm) 0.4 –0.05 1.5 –0.1 +0.2 2 1 Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junctio.

Features

+0.1
  –0.05 PARAMETER SYMBOL RATING UNIT 4 (1.9) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 2.9 ± 0.2 (1.8) 0.85 0.95 3 0.4
  –0.05 +0.1 +0.1 2.8
  –0.3 +0.2 µA µA 75 14.5 0.3 10 12.0 1.5 150 GHz 0.5 pF dB 2.5 dB VCE = 3 V, IC = 20 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 3 V, IC = 5 mA, f = 2 GHz Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 % 2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. Because this product uses high-frequency .